Optical characteristics of 1.55 μm GaInNAs multi-quantum wells

We report the optical characterization of high-quality 1.55 mum GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy....

Full description

Bibliographic Details
Main Authors: Sun, Handong, Calvez, Stephane, Dawson, M. D., Qiu, Y. N., Rorison, J. M., Clark, Antony H., Liu, H. Y., Hopkinson, M.
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/90379
http://hdl.handle.net/10220/6060
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2004&volume=85&issue=18&spage=4013&epage=4015&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Optical%20characteristics%20of%201%2E55%20%CE%BCm%20GaInNAs%20multiple%20quantum%20wells&sici.