Optical characteristics of 1.55 μm GaInNAs multi-quantum wells
We report the optical characterization of high-quality 1.55 mum GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy....
Main Authors: | , , , , , , , |
---|---|
Other Authors: | |
Format: | Journal Article |
Language: | English |
Published: |
2009
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/90379 http://hdl.handle.net/10220/6060 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2004&volume=85&issue=18&spage=4013&epage=4015&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Optical%20characteristics%20of%201%2E55%20%CE%BCm%20GaInNAs%20multiple%20quantum%20wells&sici. |
Internet
https://hdl.handle.net/10356/90379http://hdl.handle.net/10220/6060
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2004&volume=85&issue=18&spage=4013&epage=4015&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Optical%20characteristics%20of%201%2E55%20%CE%BCm%20GaInNAs%20multiple%20quantum%20wells&sici.