Optical characteristics of 1.55 μm GaInNAs multi-quantum wells
We report the optical characterization of high-quality 1.55 mum GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy....
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2009
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| Online Access: | https://hdl.handle.net/10356/90379 http://hdl.handle.net/10220/6060 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2004&volume=85&issue=18&spage=4013&epage=4015&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Optical%20characteristics%20of%201%2E55%20%CE%BCm%20GaInNAs%20multiple%20quantum%20wells&sici. |
| _version_ | 1811695614571839488 |
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| author | Sun, Handong Calvez, Stephane Dawson, M. D. Qiu, Y. N. Rorison, J. M. Clark, Antony H. Liu, H. Y. Hopkinson, M. |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Sun, Handong Calvez, Stephane Dawson, M. D. Qiu, Y. N. Rorison, J. M. Clark, Antony H. Liu, H. Y. Hopkinson, M. |
| author_sort | Sun, Handong |
| collection | NTU |
| description | We report the optical characterization of high-quality 1.55 mum GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 mum optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs. |
| first_indexed | 2024-10-01T07:26:16Z |
| format | Journal Article |
| id | ntu-10356/90379 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:26:16Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/903792023-02-28T19:29:26Z Optical characteristics of 1.55 μm GaInNAs multi-quantum wells Sun, Handong Calvez, Stephane Dawson, M. D. Qiu, Y. N. Rorison, J. M. Clark, Antony H. Liu, H. Y. Hopkinson, M. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light We report the optical characterization of high-quality 1.55 mum GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 mum optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs. Published version 2009-08-12T03:40:12Z 2019-12-06T17:46:46Z 2009-08-12T03:40:12Z 2019-12-06T17:46:46Z 2004 2004 Journal Article Sun, H. D., Clark, A. H., Liu, H. Y., Hopkinson, M., Calvez, S., Dawson, M. D., et al. (2004). Optical characteristics of 1.55 mm GaInNAs multi-quantum wells. Applied Physics Letters, 85(18), 4013-4015. 0003-6951 https://hdl.handle.net/10356/90379 http://hdl.handle.net/10220/6060 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2004&volume=85&issue=18&spage=4013&epage=4015&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Optical%20characteristics%20of%201%2E55%20%CE%BCm%20GaInNAs%20multiple%20quantum%20wells&sici. 10.1063/1.1812371 en Applied Physics Letters. Applied Physics Letters © copyright 2004 American Institute of Physics. The journal's website is located at http://apl.aip.org/. 3 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics::Optics and light Sun, Handong Calvez, Stephane Dawson, M. D. Qiu, Y. N. Rorison, J. M. Clark, Antony H. Liu, H. Y. Hopkinson, M. Optical characteristics of 1.55 μm GaInNAs multi-quantum wells |
| title | Optical characteristics of 1.55 μm GaInNAs multi-quantum wells |
| title_full | Optical characteristics of 1.55 μm GaInNAs multi-quantum wells |
| title_fullStr | Optical characteristics of 1.55 μm GaInNAs multi-quantum wells |
| title_full_unstemmed | Optical characteristics of 1.55 μm GaInNAs multi-quantum wells |
| title_short | Optical characteristics of 1.55 μm GaInNAs multi-quantum wells |
| title_sort | optical characteristics of 1 55 μm gainnas multi quantum wells |
| topic | DRNTU::Science::Physics::Optics and light |
| url | https://hdl.handle.net/10356/90379 http://hdl.handle.net/10220/6060 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2004&volume=85&issue=18&spage=4013&epage=4015&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Optical%20characteristics%20of%201%2E55%20%CE%BCm%20GaInNAs%20multiple%20quantum%20wells&sici. |
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