Optical characteristics of 1.55 μm GaInNAs multi-quantum wells

Optical characteristics of 1.55 μm GaInNAs multi-quantum wells

We report the optical characterization of high-quality 1.55 mum GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy....

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Bibliographic Details
Main Authors: Sun, Handong, Calvez, Stephane, Dawson, M. D., Qiu, Y. N., Rorison, J. M., Clark, Antony H., Liu, H. Y., Hopkinson, M.
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2009
Subjects:
DRNTU::Science::Physics::Optics and light
Online Access:https://hdl.handle.net/10356/90379
http://hdl.handle.net/10220/6060
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2004&volume=85&issue=18&spage=4013&epage=4015&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Optical%20characteristics%20of%201%2E55%20%CE%BCm%20GaInNAs%20multiple%20quantum%20wells&sici.

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