Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay
Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and n...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/90604 http://hdl.handle.net/10220/6355 |
| _version_ | 1826115415197089792 |
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| author | Tseng, Ampere A. Ng, Chi Yung Chen, Tupei Tse, Man Siu Fung, Stevenson Hon Yuen Lim, Vanissa Sei Wei |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tseng, Ampere A. Ng, Chi Yung Chen, Tupei Tse, Man Siu Fung, Stevenson Hon Yuen Lim, Vanissa Sei Wei |
| author_sort | Tseng, Ampere A. |
| collection | NTU |
| description | Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and neighboring charges have no influence on the charge decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with decay time, and the neighboring charges can either accelerate or resist the charge decay depending on their charge signs. In addition, the characteristic decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the charges stored in the nc-Si. |
| first_indexed | 2024-10-01T03:54:45Z |
| format | Journal Article |
| id | ntu-10356/90604 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:54:45Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/906042020-03-07T14:02:38Z Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay Tseng, Ampere A. Ng, Chi Yung Chen, Tupei Tse, Man Siu Fung, Stevenson Hon Yuen Lim, Vanissa Sei Wei School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and neighboring charges have no influence on the charge decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with decay time, and the neighboring charges can either accelerate or resist the charge decay depending on their charge signs. In addition, the characteristic decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the charges stored in the nc-Si. Published version 2010-08-27T06:37:05Z 2019-12-06T17:50:43Z 2010-08-27T06:37:05Z 2019-12-06T17:50:43Z 2005 2005 Journal Article Tseng, A. A., Ng, C. Y., Chen, T. P., Tse, M. S., Fung, S. H. Y., & Lim, V. S. W. (2005). Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay. Applied Physics Letters, 86, 1-3. 0003-6951 https://hdl.handle.net/10356/90604 http://hdl.handle.net/10220/6355 10.1063/1.1901831 en Applied physics letters Applied Physics Letters © 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v86/i15/p152110_s1?isAuthorized=no 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Tseng, Ampere A. Ng, Chi Yung Chen, Tupei Tse, Man Siu Fung, Stevenson Hon Yuen Lim, Vanissa Sei Wei Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay |
| title | Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay |
| title_full | Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay |
| title_fullStr | Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay |
| title_full_unstemmed | Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay |
| title_short | Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay |
| title_sort | influence of silicon nanocrystal distribution in sio2 matrix on charge injection and charge decay |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/90604 http://hdl.handle.net/10220/6355 |
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