Passive circuit designs toward terahertz using nanometer CMOS technology
This paper presents terahertz passive circuit design and investigation by using a 180 nanometer CMOS technology. A novel multimode bandpass filter and a power divider are designed by adopting a thin-film microstrip line, which uses silicon oxide layer of CMOS as the microstrip substrate. The circuit...
| Autores principales: | , , |
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| Otros Autores: | |
| Formato: | Conference Paper |
| Lenguaje: | English |
| Publicado: |
2010
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| Materias: | |
| Acceso en línea: | https://hdl.handle.net/10356/90677 http://hdl.handle.net/10220/6287 http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403789&queryText%3DPassive+Circuit+Designs+toward+Terahertz+using+Nanometer+CMOS+Technology%26openedRefinements%3D*%26searchField%3DSearch+All http://www.isic2009.org/ |
Internet
https://hdl.handle.net/10356/90677http://hdl.handle.net/10220/6287
http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403789&queryText%3DPassive+Circuit+Designs+toward+Terahertz+using+Nanometer+CMOS+Technology%26openedRefinements%3D*%26searchField%3DSearch+All
http://www.isic2009.org/