Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800  degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have be...

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Bibliographic Details
Main Authors: Yang, Ming, Chen, Tupei, Wong, Jen It, Ng, Chi Yung, Liu, Yang, Ding, Liang, Fung, Stevenson Hon Yuen, Trigg, Alastair David, Tung, Chih Hang, Li, Chang Ming
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
DRNTU::Engineering::Chemical engineering::Biochemical engineering
Online Access:https://hdl.handle.net/10356/90699
http://hdl.handle.net/10220/6352

Internet

https://hdl.handle.net/10356/90699
http://hdl.handle.net/10220/6352

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