Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have be...
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/90699 http://hdl.handle.net/10220/6352 |
| _version_ | 1811692162060910592 |
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| author | Yang, Ming Chen, Tupei Wong, Jen It Ng, Chi Yung Liu, Yang Ding, Liang Fung, Stevenson Hon Yuen Trigg, Alastair David Tung, Chih Hang Li, Chang Ming |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yang, Ming Chen, Tupei Wong, Jen It Ng, Chi Yung Liu, Yang Ding, Liang Fung, Stevenson Hon Yuen Trigg, Alastair David Tung, Chih Hang Li, Chang Ming |
| author_sort | Yang, Ming |
| collection | NTU |
| description | A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time. |
| first_indexed | 2024-10-01T06:31:24Z |
| format | Journal Article |
| id | ntu-10356/90699 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:31:24Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/906992020-03-07T14:02:39Z Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation Yang, Ming Chen, Tupei Wong, Jen It Ng, Chi Yung Liu, Yang Ding, Liang Fung, Stevenson Hon Yuen Trigg, Alastair David Tung, Chih Hang Li, Chang Ming School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics DRNTU::Engineering::Chemical engineering::Biochemical engineering A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time. Published version 2010-08-25T03:11:21Z 2019-12-06T17:52:23Z 2010-08-25T03:11:21Z 2019-12-06T17:52:23Z 2007 2007 Journal Article Yang, M., Chen, T., Wong, J. I., Ng, C. Y., Liu, Y., Ding, L., et al. (2007). Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation. Journal of Applied Physics, 101, 1-5. 0021-8979 https://hdl.handle.net/10356/90699 http://hdl.handle.net/10220/6352 10.1063/1.2749470 en Journal of applied physics Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i12/p124313_s1?isAuthorized=no 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics DRNTU::Engineering::Chemical engineering::Biochemical engineering Yang, Ming Chen, Tupei Wong, Jen It Ng, Chi Yung Liu, Yang Ding, Liang Fung, Stevenson Hon Yuen Trigg, Alastair David Tung, Chih Hang Li, Chang Ming Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation |
| title | Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation |
| title_full | Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation |
| title_fullStr | Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation |
| title_full_unstemmed | Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation |
| title_short | Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation |
| title_sort | charge trapping and retention behaviors of ge nanocrystals distributed in the gate oxide near the gate synthesized by low energy ion implantation |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics DRNTU::Engineering::Chemical engineering::Biochemical engineering |
| url | https://hdl.handle.net/10356/90699 http://hdl.handle.net/10220/6352 |
| work_keys_str_mv | AT yangming chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT chentupei chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT wongjenit chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT ngchiyung chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT liuyang chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT dingliang chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT fungstevensonhonyuen chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT triggalastairdavid chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT tungchihhang chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation AT lichangming chargetrappingandretentionbehaviorsofgenanocrystalsdistributedinthegateoxidenearthegatesynthesizedbylowenergyionimplantation |