Mathematical model of low-temperature wafer bonding under medium vacuum and its application
Low-temperature direct wafer bonding was successfully performed under medium vacuum level. A mathematical model was developed based on the qualitative understanding of the bonding mechanisms. The model combined the diffusion-reaction model of water in SiO2 and the diffusion theory in porous media. I...
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2009
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90757 http://hdl.handle.net/10220/5336 |