Mathematical model of low-temperature wafer bonding under medium vacuum and its application
Low-temperature direct wafer bonding was successfully performed under medium vacuum level. A mathematical model was developed based on the qualitative understanding of the bonding mechanisms. The model combined the diffusion-reaction model of water in SiO2 and the diffusion theory in porous media. I...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2009
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| Online Access: | https://hdl.handle.net/10356/90757 http://hdl.handle.net/10220/5336 |
| _version_ | 1811689691293941760 |
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| author | Yu, Weibo Wei, Jun Tan, Cher Ming Huang, Guang Yu |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yu, Weibo Wei, Jun Tan, Cher Ming Huang, Guang Yu |
| author_sort | Yu, Weibo |
| collection | NTU |
| description | Low-temperature direct wafer bonding was successfully performed under medium vacuum level. A mathematical model was developed based on the qualitative understanding of the bonding mechanisms. The model combined the diffusion-reaction model of water in SiO2 and the diffusion theory in porous media. It is found that the model agrees well with the experimental data. This model can be applied to predict the effects of annealing time, annealing temperature, ambient vacuum, wafer orientation, and wafer dimension on the bond strength. |
| first_indexed | 2024-10-01T05:52:07Z |
| format | Journal Article |
| id | ntu-10356/90757 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:52:07Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/907572020-03-07T14:02:39Z Mathematical model of low-temperature wafer bonding under medium vacuum and its application Yu, Weibo Wei, Jun Tan, Cher Ming Huang, Guang Yu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Low-temperature direct wafer bonding was successfully performed under medium vacuum level. A mathematical model was developed based on the qualitative understanding of the bonding mechanisms. The model combined the diffusion-reaction model of water in SiO2 and the diffusion theory in porous media. It is found that the model agrees well with the experimental data. This model can be applied to predict the effects of annealing time, annealing temperature, ambient vacuum, wafer orientation, and wafer dimension on the bond strength. Published version 2009-07-28T08:03:49Z 2019-12-06T17:53:26Z 2009-07-28T08:03:49Z 2019-12-06T17:53:26Z 2005 2005 Journal Article Yu, W., Wei, J., Tan, C. M., & Huang, G. Y. (2005). Mathematical model of low-temperature wafer bonding under medium vacuum and its application. IEEE Transactions on Advanced Packaging. 28(4), 650-658. 1521-3323 https://hdl.handle.net/10356/90757 http://hdl.handle.net/10220/5336 10.1109/TADVP.2005.858306 en IEEE transactions on advanced packaging © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 9 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Yu, Weibo Wei, Jun Tan, Cher Ming Huang, Guang Yu Mathematical model of low-temperature wafer bonding under medium vacuum and its application |
| title | Mathematical model of low-temperature wafer bonding under medium vacuum and its application |
| title_full | Mathematical model of low-temperature wafer bonding under medium vacuum and its application |
| title_fullStr | Mathematical model of low-temperature wafer bonding under medium vacuum and its application |
| title_full_unstemmed | Mathematical model of low-temperature wafer bonding under medium vacuum and its application |
| title_short | Mathematical model of low-temperature wafer bonding under medium vacuum and its application |
| title_sort | mathematical model of low temperature wafer bonding under medium vacuum and its application |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/90757 http://hdl.handle.net/10220/5336 |
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