Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix

The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. Th...

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Bibliografiska uppgifter
Huvudupphovsmän: Ding, Liang, Chen, Tupei, Liu, Yang, Ng, Chi Yung, Liu, Yu Chan, Fung, Stevenson Hon Yuen
Övriga upphovsmän: School of Electrical and Electronic Engineering
Materialtyp: Journal Article
Språk:English
Publicerad: 2010
Ämnen:
Länkar:https://hdl.handle.net/10356/90792
http://hdl.handle.net/10220/6398