Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix
The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. Th...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/90792 http://hdl.handle.net/10220/6398 |
| _version_ | 1826114777504546816 |
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| author | Ding, Liang Chen, Tupei Liu, Yang Ng, Chi Yung Liu, Yu Chan Fung, Stevenson Hon Yuen |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ding, Liang Chen, Tupei Liu, Yang Ng, Chi Yung Liu, Yu Chan Fung, Stevenson Hon Yuen |
| author_sort | Ding, Liang |
| collection | NTU |
| description | The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. |
| first_indexed | 2024-10-01T03:44:42Z |
| format | Journal Article |
| id | ntu-10356/90792 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:44:42Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/907922020-03-07T14:02:40Z Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix Ding, Liang Chen, Tupei Liu, Yang Ng, Chi Yung Liu, Yu Chan Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering A*STAR SIMTech DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. Published version 2010-09-03T07:47:53Z 2019-12-06T17:54:07Z 2010-09-03T07:47:53Z 2019-12-06T17:54:07Z 2005 2005 Journal Article Ding, L., Chen, T., Liu, Y., Ng, C. Y., Liu, Y. C., & Fung, S. H. Y. (2005). Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix. Applied Physics Letters, 87, 1-4. 0003-6951 https://hdl.handle.net/10356/90792 http://hdl.handle.net/10220/6398 10.1063/1.2051807 en Applied physics letters Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i12/p121903_s1?isAuthorized=no 4 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Ding, Liang Chen, Tupei Liu, Yang Ng, Chi Yung Liu, Yu Chan Fung, Stevenson Hon Yuen Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix |
| title | Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix |
| title_full | Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix |
| title_fullStr | Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix |
| title_full_unstemmed | Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix |
| title_short | Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix |
| title_sort | thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in sio2 matrix |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/90792 http://hdl.handle.net/10220/6398 |
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