RFCMOS unit width optimization technique

RFCMOS unit width optimization technique

In this paper, we demonstrate a unit width (Wf) optimization technique based on their unity short-circuit current gain frequency (ft), unilateral power gain frequency (f MAX), and high-frequency (HF) noise for RFCMOS transistors. Our results show that the trend for the above figures-of-merit (FOMs)...

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Bibliographic Details
Main Authors: Tong, Ah Fatt, Lim, Wei Meng, Sia, Choon Beng, Yeo, Kiat Seng, Teng, Zee Long, Ng, Pei Fern
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/91416
http://hdl.handle.net/10220/4657

Internet

https://hdl.handle.net/10356/91416
http://hdl.handle.net/10220/4657

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