Oxygen vacancy motion in Er-doped barium strontium titanate thin films

Amphoteric dopants are widely used in BaTiO3-based dielectrics to improve capacitor reliability. In this work, an analogous approach was explored for barium strontium titanate thin films. Ba0.7Sr0.3TiO3 thin films were prepared by chemical solution deposition. Er was used as a dopant t...

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Bibliographic Details
Main Authors: Wang, Junling, Trolier-McKinstry, Susan
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2011
Subjects:
Online Access:https://hdl.handle.net/10356/91506
http://hdl.handle.net/10220/6916