Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is...

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Bibliographic Details
Main Authors: Sun, Handong, Clark, Antony H., Calvez, Stephane, Dawson, M. D., Shih, D. K., Lin, H. H.
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/91710
http://hdl.handle.net/10220/6059
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici.