Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is...
| المؤلفون الرئيسيون: | , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | Journal Article |
| اللغة: | English |
| منشور في: |
2009
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/91710 http://hdl.handle.net/10220/6059 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici. |
| _version_ | 1826112542078926848 |
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| author | Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Shih, D. K. Lin, H. H. |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Shih, D. K. Lin, H. H. |
| author_sort | Sun, Handong |
| collection | NTU |
| description | We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. |
| first_indexed | 2024-10-01T03:08:44Z |
| format | Journal Article |
| id | ntu-10356/91710 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:08:44Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/917102023-02-28T19:38:03Z Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Shih, D. K. Lin, H. H. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. Published version 2009-08-12T03:34:40Z 2019-12-06T18:10:35Z 2009-08-12T03:34:40Z 2019-12-06T18:10:35Z 2005 2005 Journal Article Sun, H. D., Clark, A. H., Calvez, S., Dawson M. D., Shih, D. K., Lin, H. H. (2005). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87(8), 1-3. 0003-6951 https://hdl.handle.net/10356/91710 http://hdl.handle.net/10220/6059 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici. 10.1063/1.2034119 en Applied Physics Letters. Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/. 3 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics::Optics and light Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Shih, D. K. Lin, H. H. Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
| title | Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
| title_full | Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
| title_fullStr | Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
| title_full_unstemmed | Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
| title_short | Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
| title_sort | photoluminescence characterization of midinfrared innxas1 x in0 53ga0 47as inp multiquantum wells with various n contents |
| topic | DRNTU::Science::Physics::Optics and light |
| url | https://hdl.handle.net/10356/91710 http://hdl.handle.net/10220/6059 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici. |
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