Charging mechanism in a SiO2 matrix embedded with Si nanocrystals
One of the applications of a Si nanocrystals (nc-Si) embedded in a SiO2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-Si/SiO2 interface or in the nc-Si is still unclear. In this wor...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/91838 http://hdl.handle.net/10220/6404 |
| _version_ | 1826114340278763520 |
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| author | Fu, Yong Qing Liu, Yang Chen, Tupei Ding, Liang Zhang, Sam Fung, Stevenson Hon Yuen |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Fu, Yong Qing Liu, Yang Chen, Tupei Ding, Liang Zhang, Sam Fung, Stevenson Hon Yuen |
| author_sort | Fu, Yong Qing |
| collection | NTU |
| description | One of the applications of a Si nanocrystals (nc-Si) embedded in a SiO2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-Si/SiO2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-Si/SiO2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-Si/SiO2 interface, plays the dominant role in the charging effect. |
| first_indexed | 2024-10-01T03:37:33Z |
| format | Journal Article |
| id | ntu-10356/91838 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:37:33Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/918382020-03-07T13:57:27Z Charging mechanism in a SiO2 matrix embedded with Si nanocrystals Fu, Yong Qing Liu, Yang Chen, Tupei Ding, Liang Zhang, Sam Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering DRNTU::Engineering::Mechanical engineering One of the applications of a Si nanocrystals (nc-Si) embedded in a SiO2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-Si/SiO2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-Si/SiO2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-Si/SiO2 interface, plays the dominant role in the charging effect. Published version 2010-09-06T01:41:27Z 2019-12-06T18:12:50Z 2010-09-06T01:41:27Z 2019-12-06T18:12:50Z 2006 2006 Journal Article Liu, Y., Chen, T. P., Ding, L., Zhang, S., Fu, Y. Q., & Fung, S. H. Y., (2006). Charging mechanism in a SiO2 matrix embedded with Si nanocrystals. Journal of Applied Physics, 100, 1-3. 0021-8979 https://hdl.handle.net/10356/91838 http://hdl.handle.net/10220/6404 10.1063/1.2374929 en Journal of applied physics Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v100/i9/p096111_s1?isAuthorized=no 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering DRNTU::Engineering::Mechanical engineering Fu, Yong Qing Liu, Yang Chen, Tupei Ding, Liang Zhang, Sam Fung, Stevenson Hon Yuen Charging mechanism in a SiO2 matrix embedded with Si nanocrystals |
| title | Charging mechanism in a SiO2 matrix embedded with Si nanocrystals |
| title_full | Charging mechanism in a SiO2 matrix embedded with Si nanocrystals |
| title_fullStr | Charging mechanism in a SiO2 matrix embedded with Si nanocrystals |
| title_full_unstemmed | Charging mechanism in a SiO2 matrix embedded with Si nanocrystals |
| title_short | Charging mechanism in a SiO2 matrix embedded with Si nanocrystals |
| title_sort | charging mechanism in a sio2 matrix embedded with si nanocrystals |
| topic | DRNTU::Engineering::Electrical and electronic engineering DRNTU::Engineering::Mechanical engineering |
| url | https://hdl.handle.net/10356/91838 http://hdl.handle.net/10220/6404 |
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