Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength u...

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Bibliographic Details
Main Authors: Zhang, X. H., Nie, Dong, Mei, Ting, Djie, Hery Susanto, Ooi, Boon Siew
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/91847
http://hdl.handle.net/10220/6407

Internet

https://hdl.handle.net/10356/91847
http://hdl.handle.net/10220/6407

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