Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located...

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Bibliographic Details
Main Authors: Liu, Yang, Chen, Tupei, Ding, Liang, Yang, Ming, Wong, Jen It, Ng, Chi Yung, Yu, Siu Fung, Li, Zeng Xiang, Yuen, Chau, Zhu, Fu Rong, Fung, Stevenson Hon Yuen, Tan, M. C.
Format: Journal Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:https://hdl.handle.net/10356/91942
http://hdl.handle.net/10220/6425

Internet

https://hdl.handle.net/10356/91942
http://hdl.handle.net/10220/6425

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