Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/91942 http://hdl.handle.net/10220/6425 |
| _version_ | 1826125394166677504 |
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| author | Liu, Yang Chen, Tupei Ding, Liang Yang, Ming Wong, Jen It Ng, Chi Yung Yu, Siu Fung Li, Zeng Xiang Yuen, Chau Zhu, Fu Rong Fung, Stevenson Hon Yuen Tan, M. C. |
| author_facet | Liu, Yang Chen, Tupei Ding, Liang Yang, Ming Wong, Jen It Ng, Chi Yung Yu, Siu Fung Li, Zeng Xiang Yuen, Chau Zhu, Fu Rong Fung, Stevenson Hon Yuen Tan, M. C. |
| author_sort | Liu, Yang |
| collection | NTU |
| description | We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. |
| first_indexed | 2024-10-01T06:35:55Z |
| format | Journal Article |
| id | ntu-10356/91942 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:35:55Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/919422020-03-07T14:02:37Z Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure Liu, Yang Chen, Tupei Ding, Liang Yang, Ming Wong, Jen It Ng, Chi Yung Yu, Siu Fung Li, Zeng Xiang Yuen, Chau Zhu, Fu Rong Fung, Stevenson Hon Yuen Tan, M. C. DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. Published version 2010-09-07T07:46:31Z 2019-12-06T18:14:35Z 2010-09-07T07:46:31Z 2019-12-06T18:14:35Z 2007 2007 Journal Article Liu, Y., Chen, T. P., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., et al. (2007). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. Journal of applied physics, 101, 1-4. 0021-8979 https://hdl.handle.net/10356/91942 http://hdl.handle.net/10220/6425 10.1063/1.2713946 en Journal of applied physics Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p104306_s1?isAuthorized=no 4 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Liu, Yang Chen, Tupei Ding, Liang Yang, Ming Wong, Jen It Ng, Chi Yung Yu, Siu Fung Li, Zeng Xiang Yuen, Chau Zhu, Fu Rong Fung, Stevenson Hon Yuen Tan, M. C. Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure |
| title | Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure |
| title_full | Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure |
| title_fullStr | Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure |
| title_full_unstemmed | Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure |
| title_short | Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure |
| title_sort | influence of charge trapping on electroluminescence from si nanocrystal light emitting structure |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/91942 http://hdl.handle.net/10220/6425 |
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