Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide
We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/92081 http://hdl.handle.net/10220/6408 |