Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides

Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides

Effect of the trapped Si ions in a 30-nm gate oxide implanted with Si+ at a very low energy (1.3 keV) on the flatband voltage after various thermal annealing has been examined. For the annealing at 700°C for 20 min, although only 0.1 per cent of the implanted Si ions remained, it can cause a flatban...

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Bibliographic Details
Main Authors: Chen, Q., Zhao, P., Tseng, Ampere A., Ng, Chi Yung, Chen, Tupei, Ding, Liang, Liu, Yang, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/92134
http://hdl.handle.net/10220/6405

Internet

https://hdl.handle.net/10356/92134
http://hdl.handle.net/10220/6405

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