1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process

We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved outp...

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Bibliografiska uppgifter
Huvudupphovsmän:	Yoon, Soon Fatt, Tong, Cunzhu, Fan, Weijun, Ding, Y., Zhao, L. J., Xu, D. W.
Övriga upphovsmän:	School of Electrical and Electronic Engineering
Materialtyp:	Journal Article
Språk:	English
Publicerad:	2011
Ämnen:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Länkar:	https://hdl.handle.net/10356/92287 http://hdl.handle.net/10220/6756

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https://hdl.handle.net/10356/92287
http://hdl.handle.net/10220/6756

1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process

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