N-type behavior of ferroelectric-gate carbon nanotube network transistor

Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spon...

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Detalhes bibliográficos
Principais autores: Cheah, Jun Wei, Shi, Yumeng, Ong, Hock Guan, Lee, Chun Wei, Li, Lain-Jong, Wang, Junling
Outros Autores: School of Materials Science & Engineering
Formato: Journal Article
Idioma:English
Publicado em: 2011
Assuntos:
Acesso em linha:https://hdl.handle.net/10356/92415
http://hdl.handle.net/10220/6857