Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design

Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design

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Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison t...

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Bibliographic Details
Main Authors: Kim, Tony Tae-Hyoung, Vaddi, Ramesh., Agarwal, Rajendra P., Dasgupta, Sudeb.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2011
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:https://hdl.handle.net/10356/93900
http://hdl.handle.net/10220/7113

Internet

https://hdl.handle.net/10356/93900
http://hdl.handle.net/10220/7113

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