Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison t...
| Main Authors: | , , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2011
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| Assuntos: | |
| Acesso em linha: | https://hdl.handle.net/10356/93900 http://hdl.handle.net/10220/7113 |