Effect of processing parameters on electroless Cu seed layer properties
Electroless Cu seed layer is essential for subsequent copper metallization by electroplating for sub-micron wafer technology. This layer is required to provide good step coverage and high uniformity. In the current work, electroless copper was deposited on a TiN surface activated by palladium. The e...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94035 http://hdl.handle.net/10220/8212 |
| _version_ | 1824454129460707328 |
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| author | Chen, Z. Chan, L. See, Alex K. H. Law, S. B. Zeng, K. Y. Shen, L. Tee, K. C. Ee, Elden Yong Chiang |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Chen, Z. Chan, L. See, Alex K. H. Law, S. B. Zeng, K. Y. Shen, L. Tee, K. C. Ee, Elden Yong Chiang |
| author_sort | Chen, Z. |
| collection | NTU |
| description | Electroless Cu seed layer is essential for subsequent copper metallization by electroplating for sub-micron wafer technology. This layer is required to provide good step coverage and high uniformity. In the current work, electroless copper was deposited on a TiN surface activated by palladium. The effect of deposition time on the properties of electroless Cu films was reported. It shows that as the deposition time increases, the surface coverage of Cu film on activated TiN is improved and there is a significant reduction in sheet resistance and an increase in grain size of deposited copper film. Of particular interest is that there exists a preferred Cu (111) crystal orientation in the samples subjected to more than as short as 3 min of deposition. A surface roughness (Rrms) of ∼17 nm has been achieved. The results obtained in current study points out a promising process for laying down thin Cu seed layer. |
| first_indexed | 2025-02-19T03:17:24Z |
| format | Journal Article |
| id | ntu-10356/94035 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:17:24Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/940352023-07-14T15:57:34Z Effect of processing parameters on electroless Cu seed layer properties Chen, Z. Chan, L. See, Alex K. H. Law, S. B. Zeng, K. Y. Shen, L. Tee, K. C. Ee, Elden Yong Chiang School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Electroless Cu seed layer is essential for subsequent copper metallization by electroplating for sub-micron wafer technology. This layer is required to provide good step coverage and high uniformity. In the current work, electroless copper was deposited on a TiN surface activated by palladium. The effect of deposition time on the properties of electroless Cu films was reported. It shows that as the deposition time increases, the surface coverage of Cu film on activated TiN is improved and there is a significant reduction in sheet resistance and an increase in grain size of deposited copper film. Of particular interest is that there exists a preferred Cu (111) crystal orientation in the samples subjected to more than as short as 3 min of deposition. A surface roughness (Rrms) of ∼17 nm has been achieved. The results obtained in current study points out a promising process for laying down thin Cu seed layer. Accepted version 2012-06-20T02:56:04Z 2019-12-06T18:49:38Z 2012-06-20T02:56:04Z 2019-12-06T18:49:38Z 2004 2004 Journal Article Ee, E. Y. C., Chen, Z., Chan, L., See, Alex K. H., Law, S. B., Tee, K. C., et al. (2004). Effect of processing parameters on electroless Cu seed layer properties. Thin solid films, 462-463, 197-201. https://hdl.handle.net/10356/94035 http://hdl.handle.net/10220/8212 10.1016/j.tsf.2004.05.018 en Thin solid films © 2004 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.tsf.2004.05.018]. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Chen, Z. Chan, L. See, Alex K. H. Law, S. B. Zeng, K. Y. Shen, L. Tee, K. C. Ee, Elden Yong Chiang Effect of processing parameters on electroless Cu seed layer properties |
| title | Effect of processing parameters on electroless Cu seed layer properties |
| title_full | Effect of processing parameters on electroless Cu seed layer properties |
| title_fullStr | Effect of processing parameters on electroless Cu seed layer properties |
| title_full_unstemmed | Effect of processing parameters on electroless Cu seed layer properties |
| title_short | Effect of processing parameters on electroless Cu seed layer properties |
| title_sort | effect of processing parameters on electroless cu seed layer properties |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/94035 http://hdl.handle.net/10220/8212 |
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