Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing

Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing

We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitax...

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Bibliographic Details
Main Authors: Setiawan, Y., Tan, Eu Jin, Pey, Kin Leong, Chi, Dong Zhi, Lee, Pooi See, Hoe, Keat Mun
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/94039
http://hdl.handle.net/10220/8006

Internet

https://hdl.handle.net/10356/94039
http://hdl.handle.net/10220/8006

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