Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitax...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2012
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| Online Access: | https://hdl.handle.net/10356/94039 http://hdl.handle.net/10220/8006 |
| _version_ | 1811688203853234176 |
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| author | Setiawan, Y. Tan, Eu Jin Pey, Kin Leong Chi, Dong Zhi Lee, Pooi See Hoe, Keat Mun |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Setiawan, Y. Tan, Eu Jin Pey, Kin Leong Chi, Dong Zhi Lee, Pooi See Hoe, Keat Mun |
| author_sort | Setiawan, Y. |
| collection | NTU |
| description | We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er(Si1−xGex)2−y with orientation relationship Er(Si1−xGex)2−y(1100)- [0001]||Si1−xGex(001)[110] or Er(Si1−xGex)2−y(1100)[0001]||Si1−xGex(001)[110]. Schottky barrier height, Φ(Bp), of the Er(Si1−xGex)2−y/p − Si1−xGex(100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, Φ(Bneff), from 0.33 to 0.37 eV |
| first_indexed | 2024-10-01T05:28:29Z |
| format | Journal Article |
| id | ntu-10356/94039 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:28:29Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/940392023-07-14T15:44:54Z Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing Setiawan, Y. Tan, Eu Jin Pey, Kin Leong Chi, Dong Zhi Lee, Pooi See Hoe, Keat Mun School of Materials Science & Engineering DRNTU::Engineering::Materials We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er(Si1−xGex)2−y with orientation relationship Er(Si1−xGex)2−y(1100)- [0001]||Si1−xGex(001)[110] or Er(Si1−xGex)2−y(1100)[0001]||Si1−xGex(001)[110]. Schottky barrier height, Φ(Bp), of the Er(Si1−xGex)2−y/p − Si1−xGex(100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, Φ(Bneff), from 0.33 to 0.37 eV Published version 2012-05-16T03:57:56Z 2019-12-06T18:49:43Z 2012-05-16T03:57:56Z 2019-12-06T18:49:43Z 2007 2007 Journal Article Tan, E. J., Pey, K. L., Chi, D. Z., Lee, P. S., Setiawan, Y., & Hoe, K. M. (2008). Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing. Journal of the Electrochemical Society, 155(1). https://hdl.handle.net/10356/94039 http://hdl.handle.net/10220/8006 10.1149/1.2800761 en Journal of the electrochemical society © 2007 The Electrochemical Society. This paper was published in Journal of the Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.2800761. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Setiawan, Y. Tan, Eu Jin Pey, Kin Leong Chi, Dong Zhi Lee, Pooi See Hoe, Keat Mun Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing |
| title | Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing |
| title_full | Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing |
| title_fullStr | Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing |
| title_full_unstemmed | Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing |
| title_short | Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing |
| title_sort | materials and electrical characterization of er si1 xgex 2 y films formed on si1 xgex 001 x 0 0 3 via rapid thermal annealing |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/94039 http://hdl.handle.net/10220/8006 |
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