Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitax...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94039 http://hdl.handle.net/10220/8006 |