Formation and characterization of magnetron sputtered Ta–Si–N–O thin films
Tantalum silicon nitride films have good potential to be used as hard coatings and diffusion barriers. In this work, films with different composition were deposited using a magnetron sputter under varying nitrogen flow rates. The composition, microstructure, thermal stability and electrical resis...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94102 http://hdl.handle.net/10220/8204 |
| _version_ | 1824453147237548032 |
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| author | Xu, S. Chen, Z. Yan, H. Li, L. Ho, F. Y. Liang, M. H. Pan, J. S. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Xu, S. Chen, Z. Yan, H. Li, L. Ho, F. Y. Liang, M. H. Pan, J. S. |
| author_sort | Xu, S. |
| collection | NTU |
| description | Tantalum silicon nitride films have good potential to be used as hard coatings and diffusion barriers. In this
work, films with different composition were deposited using a magnetron sputter under varying nitrogen
flow rates. The composition, microstructure, thermal stability and electrical resistivity have been
investigated. In the as-deposited state, all films consist of amorphous TaSixOy, TaxOy, TaxNy and TaSix
compounds. The composition of films is affected by N2 flow rate. The resistivity of the as-deposited films
increases with N concentrations. At elevated temperatures, all films show good thermal stability to at least
800 °C, while film with high Si concentration is largely amorphous at 900 °C because of highly stable TaSixOy
compounds. This study suggests that the TaSixOy compounds could be the key factor in enhancing thermal
stability of Ta–Si–N–O films. |
| first_indexed | 2024-10-01T07:55:46Z |
| format | Journal Article |
| id | ntu-10356/94102 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:55:46Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/941022023-07-14T15:53:32Z Formation and characterization of magnetron sputtered Ta–Si–N–O thin films Xu, S. Chen, Z. Yan, H. Li, L. Ho, F. Y. Liang, M. H. Pan, J. S. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Tantalum silicon nitride films have good potential to be used as hard coatings and diffusion barriers. In this work, films with different composition were deposited using a magnetron sputter under varying nitrogen flow rates. The composition, microstructure, thermal stability and electrical resistivity have been investigated. In the as-deposited state, all films consist of amorphous TaSixOy, TaxOy, TaxNy and TaSix compounds. The composition of films is affected by N2 flow rate. The resistivity of the as-deposited films increases with N concentrations. At elevated temperatures, all films show good thermal stability to at least 800 °C, while film with high Si concentration is largely amorphous at 900 °C because of highly stable TaSixOy compounds. This study suggests that the TaSixOy compounds could be the key factor in enhancing thermal stability of Ta–Si–N–O films. Accepted version 2012-06-19T06:15:37Z 2019-12-06T18:50:41Z 2012-06-19T06:15:37Z 2019-12-06T18:50:41Z 2009 2009 Journal Article Yan, H., Li, L., Ho, F. Y., Liang, M. H., Pan, J. S., Xu, S., & Chen, Z. (2009). Formation and characterization of magnetron sputtered Ta-Si-N-O thin films. Thin Solid Films, 517(17), 5207-5211. https://hdl.handle.net/10356/94102 http://hdl.handle.net/10220/8204 10.1016/j.tsf.2009.03.057 en Thin solid films © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.tsf.2009.03.057]. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Xu, S. Chen, Z. Yan, H. Li, L. Ho, F. Y. Liang, M. H. Pan, J. S. Formation and characterization of magnetron sputtered Ta–Si–N–O thin films |
| title | Formation and characterization of magnetron sputtered Ta–Si–N–O thin films |
| title_full | Formation and characterization of magnetron sputtered Ta–Si–N–O thin films |
| title_fullStr | Formation and characterization of magnetron sputtered Ta–Si–N–O thin films |
| title_full_unstemmed | Formation and characterization of magnetron sputtered Ta–Si–N–O thin films |
| title_short | Formation and characterization of magnetron sputtered Ta–Si–N–O thin films |
| title_sort | formation and characterization of magnetron sputtered ta si n o thin films |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/94102 http://hdl.handle.net/10220/8204 |
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