Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric

Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric

The effect of low fluence single pulse laser annealing on a pulsed laser deposited high-k dielectric, Lu2O3 is reported. With low fluence laser irradiation, high “k” of 45 is achieved with an equivalent...

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Bibliographic Details
Main Authors: Darmawan, P., Setiawan, Y., Osipowicz, T., Lee, Pooi See, Ma, Jan
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/94240
http://hdl.handle.net/10220/8092

Internet

https://hdl.handle.net/10356/94240
http://hdl.handle.net/10220/8092

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