Stress studies on Ti and TiN interlayer in (100) silicon wafers
Ti is used to improve wettability between Al and Si. TiN is used as a diffusion barrier to prevent diffusion of Al into Si during annealing. In this study, stress from Ti and TiN thin-films on (100) Silicon wafers are studied using Stoney’s equation. [1st Award]
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| Format: | Student Research Poster |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/94300 http://hdl.handle.net/10220/8945 |