Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range, viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., x=0)....
| Asıl Yazarlar: | , , , , , , |
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| Diğer Yazarlar: | |
| Materyal Türü: | Journal Article |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
2012
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| Konular: | |
| Online Erişim: | https://hdl.handle.net/10356/94799 http://hdl.handle.net/10220/8031 |