Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range, viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., x=0)....
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94799 http://hdl.handle.net/10220/8031 |
| _version_ | 1826116690162745344 |
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| author | Pey, Kin Leong Chattopadhyay, Sujay Lee, Pooi See Zhao, H. B. Choi, W. K. Antoniadis, D. A. Fitzgerald, Eugene A. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Pey, Kin Leong Chattopadhyay, Sujay Lee, Pooi See Zhao, H. B. Choi, W. K. Antoniadis, D. A. Fitzgerald, Eugene A. |
| author_sort | Pey, Kin Leong |
| collection | NTU |
| description | The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range,
viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., x=0).
Ni2(Si1-xGex) and Ni3(Si1-xGex)2 were observed at 300 °C whereas a uniform film of
Ni(Si1-xGex) was formed at 400 °C for both Si0.8Ge0.2 and Si0.7Ge0.3 substrates. At 500 °C, a mixed
layer consisting of Ni(Si1-yGey) and Si1-zGez was formed with a relation of z>x>y. Sheet
resistance measurement results show that the silicided film attains its lowest value at an annealing
temperature of 400 °C. The approximate values of the resistivity of the corresponding uniform
Ni(Si1-xGex) (x=0.2, 0.3) derived from the transmission electron microscope and sheet resistance
results are 19 and 23 μΩcm, respectively. |
| first_indexed | 2024-10-01T04:15:50Z |
| format | Journal Article |
| id | ntu-10356/94799 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:15:50Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/947992023-07-14T15:44:46Z Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing Pey, Kin Leong Chattopadhyay, Sujay Lee, Pooi See Zhao, H. B. Choi, W. K. Antoniadis, D. A. Fitzgerald, Eugene A. School of Materials Science & Engineering DRNTU::Engineering::Materials The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range, viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni2(Si1-xGex) and Ni3(Si1-xGex)2 were observed at 300 °C whereas a uniform film of Ni(Si1-xGex) was formed at 400 °C for both Si0.8Ge0.2 and Si0.7Ge0.3 substrates. At 500 °C, a mixed layer consisting of Ni(Si1-yGey) and Si1-zGez was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400 °C. The approximate values of the resistivity of the corresponding uniform Ni(Si1-xGex) (x=0.2, 0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μΩcm, respectively. Published version 2012-05-16T08:05:36Z 2019-12-06T19:02:29Z 2012-05-16T08:05:36Z 2019-12-06T19:02:29Z 2002 2002 Journal Article Zhao, H. B., Pey, K. L., Choi, W. K., Chattopadhyay, S., Fitzgerald, E. A., Antoniadis, D. A., et al. (2002). Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing. Journal of Applied Physics, 92, 214-217. https://hdl.handle.net/10356/94799 http://hdl.handle.net/10220/8031 10.1063/1.1482423 en Journal of applied physics © 2002 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.1482423. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Pey, Kin Leong Chattopadhyay, Sujay Lee, Pooi See Zhao, H. B. Choi, W. K. Antoniadis, D. A. Fitzgerald, Eugene A. Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing |
| title | Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing |
| title_full | Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing |
| title_fullStr | Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing |
| title_full_unstemmed | Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing |
| title_short | Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing |
| title_sort | interfacial reacions of ni on si1 xgex x 0 2 0 3 at low temperature by rapid thermal annealing |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/94799 http://hdl.handle.net/10220/8031 |
| work_keys_str_mv | AT peykinleong interfacialreacionsofnionsi1xgexx0203atlowtemperaturebyrapidthermalannealing AT chattopadhyaysujay interfacialreacionsofnionsi1xgexx0203atlowtemperaturebyrapidthermalannealing AT leepooisee interfacialreacionsofnionsi1xgexx0203atlowtemperaturebyrapidthermalannealing AT zhaohb interfacialreacionsofnionsi1xgexx0203atlowtemperaturebyrapidthermalannealing AT choiwk interfacialreacionsofnionsi1xgexx0203atlowtemperaturebyrapidthermalannealing AT antoniadisda interfacialreacionsofnionsi1xgexx0203atlowtemperaturebyrapidthermalannealing AT fitzgeraldeugenea interfacialreacionsofnionsi1xgexx0203atlowtemperaturebyrapidthermalannealing |