Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process
Titanium silicon nitride (Ti–Si–N) has emerged as a strong candidate for next generation diffusion barrier material in copper/low-k dielectric back-end-of-line device fabrication. Low frequency, high density inductively coupled plasma process has been developed for the growth of Ti–Si–N film. This w...
| Main Authors: | , , , , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Journal Article |
| 語言: | English |
| 出版: |
2012
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/94919 http://hdl.handle.net/10220/7695 |