Effect of ion implantation on layer inversion of Ni silicided poly-Si

Effect of ion implantation on layer inversion of Ni silicided poly-Si

The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2+ , which affect the poly-Si grain growth were used. Retarded l...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron: Mangelinck, D., Osipowicz, T., Dai, J. Y., Chan, L., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi
Awduron Eraill: School of Materials Science & Engineering
Fformat: Journal Article
Iaith:English
Cyhoeddwyd: 2012
Pynciau:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Mynediad Ar-lein:https://hdl.handle.net/10356/95017
http://hdl.handle.net/10220/8104

Rhyngrwyd

https://hdl.handle.net/10356/95017
http://hdl.handle.net/10220/8104

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