Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder
Electroless Ni–P with a thin layer of immersion gold has been considered as a promising under bump metallization (UBM) for low-cost flip–chip technology. However, the presence of P in electroless Ni–P causes complicated interfacial reactions, which affect the reliability of solder joint. In this wor...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/95228 http://hdl.handle.net/10220/9385 |