Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test
Adhesion between barrier layers and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers leading to device failure. As the sizes of transistors are scaled down to submicron regime, new materials an...
Main Authors: | Prasad, K., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Chen, Zhong, Zhang, Sam, Chen, Zhe |
---|---|
Other Authors: | School of Materials Science & Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/95351 http://hdl.handle.net/10220/8218 |
Similar Items
-
Effect of Ni–P thickness on solid-state interfacial reactions between Sn–3.5Ag solder and electroless Ni–P metallization on Cu substrate
by: Kumar, Aditya, et al.
Published: (2013) -
Fracture toughness measurement of thin films on compliant substrate using controlled buckling test
by: Chen, Zhong, et al.
Published: (2012) -
Adhesion enhancement of sol–gel coating on polycarbonate by heated impregnation treatment
by: Wu, Linda Y. L., et al.
Published: (2013) -
Low-voltage organic ferroelectric field effect transistors using Langmuir–Schaefer films of poly(vinylidene fluoride-trifluororethylene)
by: Nguyen, Chien A., et al.
Published: (2012) -
Investigation of turn-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric
by: Nguyen, Chien A., et al.
Published: (2013)