High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the “magnetic” aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-ma...

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Bibliographic Details
Main Authors: Anil Kumar, P., Sarma, D. D., Ogale, Satishchandra B., Thakare, Vishal, Xing, Guozhong, Peng, Haiyang, Rana, Abhimanyu, Game, Onkar, Banpurkar, Arun, Kolekar, Yesappa, Ghosh, Kartik, Wu, Tom
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Science::Physics::Electricity and magnetism
Online Access:https://hdl.handle.net/10356/95675
http://hdl.handle.net/10220/9136

Internet

https://hdl.handle.net/10356/95675
http://hdl.handle.net/10220/9136

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