Band gap opening of graphene by doping small boron nitride domains
Boron nitride (BN) domains are easily formed in the basal plane of graphene due to phase separation. With first-principles calculations, it is demonstrated theoretically that the band gap of graphene can be opened effectively around K (or K′) points by introducing small BN domains. It is also found...
| Main Authors: | , , , |
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| מחברים אחרים: | |
| פורמט: | Journal Article |
| שפה: | English |
| יצא לאור: |
2013
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| גישה מקוונת: | https://hdl.handle.net/10356/95843 http://hdl.handle.net/10220/10742 |