Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge
The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is ach...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/96076 http://hdl.handle.net/10220/11346 |