Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge
The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is ach...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/96076 http://hdl.handle.net/10220/11346 |
| _version_ | 1826129480364589056 |
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| author | Zhang, L. Li, H. Y. Peng, L. Lo, Guo-Qing Kwong, Dim Lee Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, L. Li, H. Y. Peng, L. Lo, Guo-Qing Kwong, Dim Lee Tan, Chuan Seng |
| author_sort | Zhang, L. |
| collection | NTU |
| description | The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing Al2O3-induced negative fixed charge (|Qf| = 7.44 × 1011 cm-2) at the Si-liner interface. This causes a positive shift in the flat-band voltage (ΔVFB = 6.85 V) and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests (~0-5 V). The leakage current density of the TSV with Al2O3 layer and PETEOS liner is improved by ~10× after annealing in forming gas (N2/H2) at 300 °C for 30 min. |
| first_indexed | 2024-10-01T07:41:18Z |
| format | Journal Article |
| id | ntu-10356/96076 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:41:18Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/960762020-03-07T13:57:26Z Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge Zhang, L. Li, H. Y. Peng, L. Lo, Guo-Qing Kwong, Dim Lee Tan, Chuan Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing Al2O3-induced negative fixed charge (|Qf| = 7.44 × 1011 cm-2) at the Si-liner interface. This causes a positive shift in the flat-band voltage (ΔVFB = 6.85 V) and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests (~0-5 V). The leakage current density of the TSV with Al2O3 layer and PETEOS liner is improved by ~10× after annealing in forming gas (N2/H2) at 300 °C for 30 min. 2013-07-15T01:36:44Z 2019-12-06T19:25:17Z 2013-07-15T01:36:44Z 2019-12-06T19:25:17Z 2012 2012 Journal Article https://hdl.handle.net/10356/96076 http://hdl.handle.net/10220/11346 10.1109/LED.2012.2190968 en IEEE electron device letters © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhang, L. Li, H. Y. Peng, L. Lo, Guo-Qing Kwong, Dim Lee Tan, Chuan Seng Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge |
| title | Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge |
| title_full | Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge |
| title_fullStr | Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge |
| title_full_unstemmed | Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge |
| title_short | Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge |
| title_sort | operating tsv in stable accumulation capacitance region by utilizing al2o3 induced negative fixed charge |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/96076 http://hdl.handle.net/10220/11346 |
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