Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells

A ten-band k ∙p Hamiltonian for III-V-N dilute nitride semiconductor quantum wells (QWs) grown on the (11N)-oriented substrates is presented. The energy dispersion curves, optical transition matrix elements, internal piezoelectric field, and optical gain of InGaAsN/GaAs on the (110), (111), (113)...

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Detalles Bibliográficos
Autor Principal: Fan, Weijun
Outros autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Idioma:English
Publicado: 2013
Subjects:
Acceso en liña:https://hdl.handle.net/10356/96418
http://hdl.handle.net/10220/9931