Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells
A ten-band k ∙p Hamiltonian for III-V-N dilute nitride semiconductor quantum wells (QWs) grown on the (11N)-oriented substrates is presented. The energy dispersion curves, optical transition matrix elements, internal piezoelectric field, and optical gain of InGaAsN/GaAs on the (110), (111), (113)...
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| Formato: | Journal Article |
| Idioma: | English |
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2013
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| Acceso en liña: | https://hdl.handle.net/10356/96418 http://hdl.handle.net/10220/9931 |