Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition
High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “three-step growth” approach in a reduced pressure chemical vapor deposition system. The growth steps consist of sequential low temperature (LT) at 400 °C, intermediate temperature ramp (LT-HT) of ~ 6.5 °...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/96460 http://hdl.handle.net/10220/10290 |