Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition
High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “three-step growth” approach in a reduced pressure chemical vapor deposition system. The growth steps consist of sequential low temperature (LT) at 400 °C, intermediate temperature ramp (LT-HT) of ~ 6.5 °...
| Main Authors: | , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/96460 http://hdl.handle.net/10220/10290 |
| _version_ | 1811682881433501696 |
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| author | Tan, Yew Heng Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tan, Yew Heng Tan, Chuan Seng |
| author_sort | Tan, Yew Heng |
| collection | NTU |
| description | High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “three-step growth” approach in a reduced pressure chemical vapor deposition system. The growth steps consist of sequential low temperature (LT) at 400 °C, intermediate temperature ramp (LT-HT) of ~ 6.5 °C/min and high temperature (HT) at 600 °C. This is followed by post-growth anneal in hydrogen at temperature ranging from 680 to 825 °C. Analytical characterizations have shown that the Ge epitaxial film of thickness ~ 1 μm experiences thermally induced tensile strain of 0.20% with a threading dislocation density of < 107 cm− 2 under optical microscope and root mean square roughness of ~ 0.9 nm. Further analysis has shown that the annealing time at high temperature has an impact on the surface morphology of the Ge epitaxial film. Further reduction in the RMS roughness can be achieved either through chemical mechanical polishing or to insert an annealing step between the LT–HT ramp and HT steps. |
| first_indexed | 2024-10-01T04:03:53Z |
| format | Journal Article |
| id | ntu-10356/96460 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:03:53Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/964602020-03-07T14:02:46Z Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition Tan, Yew Heng Tan, Chuan Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “three-step growth” approach in a reduced pressure chemical vapor deposition system. The growth steps consist of sequential low temperature (LT) at 400 °C, intermediate temperature ramp (LT-HT) of ~ 6.5 °C/min and high temperature (HT) at 600 °C. This is followed by post-growth anneal in hydrogen at temperature ranging from 680 to 825 °C. Analytical characterizations have shown that the Ge epitaxial film of thickness ~ 1 μm experiences thermally induced tensile strain of 0.20% with a threading dislocation density of < 107 cm− 2 under optical microscope and root mean square roughness of ~ 0.9 nm. Further analysis has shown that the annealing time at high temperature has an impact on the surface morphology of the Ge epitaxial film. Further reduction in the RMS roughness can be achieved either through chemical mechanical polishing or to insert an annealing step between the LT–HT ramp and HT steps. 2013-06-13T02:02:06Z 2019-12-06T19:31:05Z 2013-06-13T02:02:06Z 2019-12-06T19:31:05Z 2011 2011 Journal Article Tan, Y. H. & Tan, C. S. (2012). Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition. Thin Solid Films, 520(7), 2711-2716. 0040-6090 https://hdl.handle.net/10356/96460 http://hdl.handle.net/10220/10290 10.1016/j.tsf.2011.11.046 en Thin solid films © 2011 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Tan, Yew Heng Tan, Chuan Seng Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition |
| title | Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition |
| title_full | Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition |
| title_fullStr | Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition |
| title_full_unstemmed | Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition |
| title_short | Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition |
| title_sort | growth and characterization of germanium epitaxial film on silicon 001 using reduced pressure chemical vapor deposition |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/96460 http://hdl.handle.net/10220/10290 |
| work_keys_str_mv | AT tanyewheng growthandcharacterizationofgermaniumepitaxialfilmonsilicon001usingreducedpressurechemicalvapordeposition AT tanchuanseng growthandcharacterizationofgermaniumepitaxialfilmonsilicon001usingreducedpressurechemicalvapordeposition |