Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Ea...
Main Authors: | , , , , , , , , , |
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其他作者: | |
格式: | Journal Article |
语言: | English |
出版: |
2013
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主题: | |
在线阅读: | https://hdl.handle.net/10356/96545 http://hdl.handle.net/10220/9923 |