Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Ea...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/96545 http://hdl.handle.net/10220/9923 |
| _version_ | 1826116297251880960 |
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| author | Sun, Xiaowei Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Sun, Xiaowei Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Demir, Hilmi Volkan |
| author_sort | Sun, Xiaowei |
| collection | NTU |
| description | This work reports both experimental and theoretical studies on
the InGaN/GaN light-emitting diodes (LEDs) with optical output power and
external quantum efficiency (EQE) levels substantially enhanced by
incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current
spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the
PNPNP-GaN structure is completely depleted due to the built-in electric
field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN
layers serve as the hole spreaders. As a result, the electrical performance of
the proposed device is improved and the optical output power and EQE are
enhanced. |
| first_indexed | 2024-10-01T04:09:01Z |
| format | Journal Article |
| id | ntu-10356/96545 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:09:01Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/965452023-02-28T19:40:28Z Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer Sun, Xiaowei Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Demir, Hilmi Volkan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. Published version 2013-05-13T01:56:08Z 2019-12-06T19:32:16Z 2013-05-13T01:56:08Z 2019-12-06T19:32:16Z 2013 2013 Journal Article Zhang, Z. H., Tan, S. T., Liu, W., Ju, Z., Zheng, K., Kyaw, Z., et al. (2013). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer. Optics Express, 21(4), 4958-4969. 1094-4087 https://hdl.handle.net/10356/96545 http://hdl.handle.net/10220/9923 10.1364/OE.21.004958 en Optics express © 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: http://dx.doi.org/10.1364/OE.21.004958. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio Sun, Xiaowei Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Demir, Hilmi Volkan Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer |
| title | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer |
| title_full | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer |
| title_fullStr | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer |
| title_full_unstemmed | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer |
| title_short | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer |
| title_sort | improved ingan gan light emitting diodes with a p gan n gan p gan n gan p gan current spreading layer |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio |
| url | https://hdl.handle.net/10356/96545 http://hdl.handle.net/10220/9923 |
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