Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits

An analytical model is proposed which relates the bonding temperature, pressure and duration with the integrity of metal–metal thermocompression bonds. Unlike previous models, this approach takes into account the pressure-dependent time evolution of the thermocompression bond formation. The model al...

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Main Authors: Yan, Li Ling, Gan, Chee Lip, Kor, Katherine Hwee Boon, Chia, Hong Ling, Pey, Kin Leong, Made, Riko I., Thompson, Carl V.
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/96629
http://hdl.handle.net/10220/10368
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author Yan, Li Ling
Gan, Chee Lip
Kor, Katherine Hwee Boon
Chia, Hong Ling
Pey, Kin Leong
Made, Riko I.
Thompson, Carl V.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Yan, Li Ling
Gan, Chee Lip
Kor, Katherine Hwee Boon
Chia, Hong Ling
Pey, Kin Leong
Made, Riko I.
Thompson, Carl V.
author_sort Yan, Li Ling
collection NTU
description An analytical model is proposed which relates the bonding temperature, pressure and duration with the integrity of metal–metal thermocompression bonds. Unlike previous models, this approach takes into account the pressure-dependent time evolution of the thermocompression bond formation. The model allows calculation of the true contact area of rough surfaces, based on a creep-dominated plastic deformation. Verification of the model was provided through experiments on Cu–Cu thermocompression bonds of electroplated Cu on diced silicon wafers with chemically/mechanically polished surfaces. The samples were bonded at a range of temperatures, pressures and times. Shear strength measurements were used to characterize the effects of the bonding parameters on the interface bond strength. Calculated true contact area and bond shear strength can be related by a single proportionality factor. The model can be used to predict the thermocompression bond quality for given bonding parameters and process optimization for reliable bonds, thus assisting in the adoption of the Cu thermocompression bond process in three-dimensional integrated circuit applications.
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spelling ntu-10356/966292020-06-01T10:13:32Z Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits Yan, Li Ling Gan, Chee Lip Kor, Katherine Hwee Boon Chia, Hong Ling Pey, Kin Leong Made, Riko I. Thompson, Carl V. School of Materials Science & Engineering An analytical model is proposed which relates the bonding temperature, pressure and duration with the integrity of metal–metal thermocompression bonds. Unlike previous models, this approach takes into account the pressure-dependent time evolution of the thermocompression bond formation. The model allows calculation of the true contact area of rough surfaces, based on a creep-dominated plastic deformation. Verification of the model was provided through experiments on Cu–Cu thermocompression bonds of electroplated Cu on diced silicon wafers with chemically/mechanically polished surfaces. The samples were bonded at a range of temperatures, pressures and times. Shear strength measurements were used to characterize the effects of the bonding parameters on the interface bond strength. Calculated true contact area and bond shear strength can be related by a single proportionality factor. The model can be used to predict the thermocompression bond quality for given bonding parameters and process optimization for reliable bonds, thus assisting in the adoption of the Cu thermocompression bond process in three-dimensional integrated circuit applications. 2013-06-14T01:08:17Z 2019-12-06T19:33:10Z 2013-06-14T01:08:17Z 2019-12-06T19:33:10Z 2011 2011 Journal Article Made, R. I., Gan, C. L., Yan, L., Kor, K. H. B., Chia, H. L., Pey, K. L., et al. (2012). Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits. Acta Materialia, 60(2), 578-587. 1359-6454 https://hdl.handle.net/10356/96629 http://hdl.handle.net/10220/10368 10.1016/j.actamat.2011.09.038 166522 en Acta materialia © 2011 Acta Materialia Inc.
spellingShingle Yan, Li Ling
Gan, Chee Lip
Kor, Katherine Hwee Boon
Chia, Hong Ling
Pey, Kin Leong
Made, Riko I.
Thompson, Carl V.
Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits
title Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits
title_full Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits
title_fullStr Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits
title_full_unstemmed Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits
title_short Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits
title_sort experimental characterization and modeling of the mechanical properties of cu cu thermocompression bonds for three dimensional integrated circuits
url https://hdl.handle.net/10356/96629
http://hdl.handle.net/10220/10368
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