Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characterist...

תיאור מלא

מידע ביבליוגרפי
Main Authors: Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan
מחברים אחרים: School of Electrical and Electronic Engineering
פורמט: Journal Article
שפה:English
יצא לאור: 2013
נושאים:
DRNTU::Engineering::Electrical and electronic engineering
גישה מקוונת:https://hdl.handle.net/10356/96863
http://hdl.handle.net/10220/11617

אינטרנט

https://hdl.handle.net/10356/96863
http://hdl.handle.net/10220/11617

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