Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate
We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characterist...
Main Authors: | , , , , , , , , , |
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מחברים אחרים: | |
פורמט: | Journal Article |
שפה: | English |
יצא לאור: |
2013
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נושאים: | |
גישה מקוונת: | https://hdl.handle.net/10356/96863 http://hdl.handle.net/10220/11617 |