A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
In this paper, a new field dependent effective mobility model including the drain-induced vertical field effect (DIVF) is presented to calculate the channel thermal noise of short channel MOSFETs operating at high frequencies. Based on the new channel thermal noise model, the simulated channel therm...
Main Authors: | , , , , , , |
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Other Authors: | |
Format: | Journal Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/96912 http://hdl.handle.net/10220/10377 |